Did you mean: RQA0010UXAQSTL-E
Product Datasheet Search Results:
18 Pages, 184 KB, Original- RQA0010UXAQSTL-E
- Renesas Technology / Hitachi Semiconductor
- Silicon N-Channel MOS FET
18 Pages, 184 KB, Original- RQA0010VXDQSTL-E
- Renesas Technology / Hitachi Semiconductor
- Silicon N-Channel MOS FET
15 Pages, 163 KB, Original- RQA0014XXDQSTL-E
- Renesas Technology / Hitachi Semiconductor
- Silicon N-Channel MOS FET
7 Pages, 89 KB, Original- RQJ0301HGDQSTL-E
- Renesas Technology / Hitachi Semiconductor
- Transistor Mosfet P-CH 30V 5.2A 3UPAK T/R
7 Pages, 80 KB, Original- RQJ0601DGDQSTL-E
- Renesas Technology / Hitachi Semiconductor
- Transistor Mosfet P-CH 60V 2.8A 3UPAK T/R
7 Pages, 90 KB, Original- RQJ0602EGDQSTL-E
- Renesas Technology / Hitachi Semiconductor
- Transistor Mosfet P-CH 60V 1.5A 3UPAK T/R
7 Pages, 82 KB, Original- RQK0301FGDQSTL-E
- Renesas Technology / Hitachi Semiconductor
- Transistor Mosfet N-CH 30V 6A 3UPAK T/R
7 Pages, 82 KB, Original- RQK0302GGDQSTL-E
- Renesas Technology / Hitachi Semiconductor
- Transistor Mosfet N-CH 30V 3.8A 3UPAK T/R
7 Pages, 82 KB, Original- RQK0601AGDQSTL-E
- Renesas Technology / Hitachi Semiconductor
- Transistor Mosfet N-CH 60V 5A 3UPAK T/R
7 Pages, 83 KB, Original- RQK0603CGDQSTL-E
- Renesas Technology / Hitachi Semiconductor
- Transistor Mosfet N-CH 60V 2.8A 3UPAK T/R
8 Pages, 112 KB, Original- RQK0607AQDQSTL-E
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET Power Switching
8 Pages, 112 KB, Original- RQK0608BQDQSTL-E
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET Power Switching
Product Details Search Results:
Renesas.com/RQA0010UXAQSTL-E
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"16 V","Surface Mount":"Yes","Case Connection":"SOURCE","Mfr Package Description":"SC-62, UPAK-3...
1436 Bytes - 03:03:42, 17 November 2024
Renesas.com/RQA0010VXDQSTL-E
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"16 V","Surface Mount":"Yes","Case Connection":"SOURCE","Mfr Package Description":"SC-62, UPAK-3...
1436 Bytes - 03:03:42, 17 November 2024
Renesas.com/RQJ0301HGDQSTL-E
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0790 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"7.6 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS B...
1561 Bytes - 03:03:42, 17 November 2024
Renesas.com/RQJ0304DQDQSTL-E
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.6 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...
1548 Bytes - 03:03:42, 17 November 2024
Renesas.com/RQJ0305EQDQSTL-E
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.4 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"12 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...
1548 Bytes - 03:03:42, 17 November 2024
Renesas.com/RQJ0306FQDQSTL-E
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"16 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Br...
1547 Bytes - 03:03:42, 17 November 2024
Renesas.com/RQJ0601DGDQSTL-E
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"4.2 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS B...
1558 Bytes - 03:03:42, 17 November 2024
Renesas.com/RQJ0602EGDQSTL-E
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8680 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"2.2 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR",...
1566 Bytes - 03:03:42, 17 November 2024
Renesas.com/RQK0301FGDQSTL-E
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0490 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"8.8 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Bre...
1546 Bytes - 03:03:42, 17 November 2024
Renesas.com/RQK0302GGDQSTL-E
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"5.6 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS B...
1549 Bytes - 03:03:42, 17 November 2024
Renesas.com/RQK0601AGDQSTL-E
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0910 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"7.3 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Bre...
1544 Bytes - 03:03:42, 17 November 2024
Renesas.com/RQK0603CGDQSTL-E
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3360 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"4.1 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS B...
1549 Bytes - 03:03:42, 17 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| QSTL-3_8-1_2-U.pdf | 1.14 | 1 | Request |
