Product Datasheet Search Results:

RQK0601AGDQSTL-E.pdf7 Pages, 82 KB, Original
RQK0601AGDQSTL-E.pdf9 Pages, 105 KB, Original
RQK0601AGDQSTL-E
Renesas Electronics
5 A, 60 V, 0.091 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Renesas.com/RQK0601AGDQSTL-E
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0910 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"7.3 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Bre...
1544 Bytes - 04:51:50, 17 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
STL-ETH2.pdf1.191Request