Product Datasheet Search Results:

RQK0302GGDQSTL-E.pdf7 Pages, 82 KB, Original
RQK0302GGDQSTL-E.pdf9 Pages, 106 KB, Original
RQK0302GGDQSTL-E
Renesas Electronics
3.8 A, 30 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Renesas.com/RQK0302GGDQSTL-E
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"5.6 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS B...
1549 Bytes - 04:55:35, 17 November 2024

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