Product Datasheet Search Results:
7 Pages, 90 KB, Original- RQJ0602EGDQSTL-E
- Renesas Technology / Hitachi Semiconductor
- Transistor Mosfet P-CH 60V 1.5A 3UPAK T/R
9 Pages, 111 KB, Original- RQJ0602EGDQSTL-E
- Renesas Electronics
- 1.5 A, 60 V, 0.868 ohm, P-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Renesas.com/RQJ0602EGDQSTL-E
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8680 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"2.2 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR",...
1566 Bytes - 04:55:26, 17 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| STL-ETH2.pdf | 1.19 | 1 | Request |
