Product Datasheet Search Results:
- RQA0010VXDQSTL-E
- Renesas Technology / Hitachi Semiconductor
- Silicon N-Channel MOS FET
- RQA0010VXDQSTL-E
- Renesas Electronics
- UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Product Details Search Results:
Renesas.com/RQA0010VXDQSTL-E
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"16 V","Surface Mount":"Yes","Case Connection":"SOURCE","Mfr Package Description":"SC-62, UPAK-3...
1436 Bytes - 04:47:10, 17 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
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STL-ETH2.pdf | 1.19 | 1 | Request |