Product Datasheet Search Results:
8 Pages, 112 KB, Original- RQK0608BQDQSTL-E
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET Power Switching
10 Pages, 134 KB, Original- RQK0608BQDQSTL-E
- Renesas Electronics
- 3.2 A, 60 V, 0.195 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Renesas.com/RQK0608BQDQSTL-E
{"Terminal Finish":"TIN BISMUTH","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1950 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Br...
1548 Bytes - 04:55:51, 17 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| STL-ETH2.pdf | 1.19 | 1 | Request |
