Product Datasheet Search Results:
6 Pages, 168 KB, Scan- IRFBG30
- International Rectifier
- Power MOSFET(Vdss=1000V, Rds(on)=5.0ohm, Id=3.1A)
55 Pages, 1163 KB, Original- IRFBG30L
- International Rectifier
- Trans MOSFET N-CH 1KV 3.1A 3-Pin (3+Tab) TO-220AB
55 Pages, 1163 KB, Original- IRFBG30LPBF
- International Rectifier
- Trans MOSFET N-CH 1KV 3.1A 3-Pin (3+Tab) TO-220AB
8 Pages, 168 KB, Scan- IRFBG30PBF
- International Rectifier
- 600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
9 Pages, 1569 KB, Original- IRFBG30
- Vishay [siliconix]
- MOSFET N-CH 1000V 3.1A TO-220AB - IRFBG30
1 Pages, 41 KB, Scan- IRFBG30-001
- Vishay Presicion Group
- 2.3 A, 1000 V, 5.6 ohm, N-CHANNEL, Si, POWER, MOSFET
1 Pages, 41 KB, Scan- IRFBG30-001PBF
- Vishay Presicion Group
- 2.3 A, 1000 V, 5.6 ohm, N-CHANNEL, Si, POWER, MOSFET
1 Pages, 28 KB, Scan- IRFBG30-002
- Vishay Presicion Group
- 3.1 A, 1000 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
1 Pages, 28 KB, Scan- IRFBG30-002PBF
- Vishay Presicion Group
- 3.1 A, 1000 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Product Details Search Results:
Irf.com/IRFBG30L
887 Bytes - 22:48:53, 05 November 2024
Irf.com/IRFBG30LPBF
900 Bytes - 22:48:53, 05 November 2024
Siliconix_vishay/IRFBG30PBF
805 Bytes - 22:48:53, 05 November 2024
Vishay.com/IRFBG30
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"5 Ohm @ 1.9A, 10V","FET Feature":"Standard","Product Photos":"TO-220AB","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"1,000","Supplier Device Package":"TO-220AB","Other Names":"*IRFBG30","Packaging":"Tube","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"IRFBG30 Packaging Information","Power - Max":"125W","Package / Case":"TO-220-3","Mounting Type":"Through Hole","Drain to Sourc...
1675 Bytes - 22:48:53, 05 November 2024
Vishay.com/IRFBG30-001
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"9.2 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.3 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuratio...
1363 Bytes - 22:48:53, 05 November 2024
Vishay.com/IRFBG30-001PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"5.6 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"9.2 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volt...
1425 Bytes - 22:48:53, 05 November 2024
Vishay.com/IRFBG30-002
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.1 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"12 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1454 Bytes - 22:48:53, 05 November 2024
Vishay.com/IRFBG30-002PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.1 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"12 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-O...
1516 Bytes - 22:48:53, 05 November 2024
Vishay.com/IRFBG30-003
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.1 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"12 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1454 Bytes - 22:48:53, 05 November 2024
Vishay.com/IRFBG30-003PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.1 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"12 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-O...
1514 Bytes - 22:48:53, 05 November 2024
Vishay.com/IRFBG30-005PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.1 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"12 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-O...
1516 Bytes - 22:48:53, 05 November 2024
Vishay.com/IRFBG30-006
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.1 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"12 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1454 Bytes - 22:48:53, 05 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRFB3307.pdf | 0.35 | 1 | Request | |
| IRFB3077G.pdf | 0.29 | 1 | Request | |
| IRFB5620.pdf | 0.26 | 1 | Request | |
| IRFB4215.pdf | 0.20 | 1 | Request | |
| IRFB3004.pdf | 0.45 | 1 | Request | |
| IRFB4103.pdf | 0.24 | 1 | Request | |
| IRFB4610.pdf | 0.19 | 1 | Request | |
| IRFB3507.pdf | 0.24 | 1 | Request | |
| IRFB41N15D.pdf | 0.26 | 1 | Request | |
| IRFB4710.pdf | 0.20 | 1 | Request | |
| IRFB61N15D.pdf | 0.16 | 1 | Request | |
| IRFBA1405P.pdf | 0.13 | 1 | Request |
