Product Datasheet Search Results:
1 Pages, 41 KB, Scan- IRFBG30-001
- Vishay Presicion Group
- 2.3 A, 1000 V, 5.6 ohm, N-CHANNEL, Si, POWER, MOSFET
1 Pages, 41 KB, Scan- IRFBG30-001PBF
- Vishay Presicion Group
- 2.3 A, 1000 V, 5.6 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Vishay.com/IRFBG30-001
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"9.2 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.3 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuratio...
1363 Bytes - 00:37:19, 06 November 2024
Vishay.com/IRFBG30-001PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"5.6 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"9.2 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volt...
1425 Bytes - 00:37:19, 06 November 2024
