IRFBG30-001 2.3 A, 1000 V, 5.6 ohm, N-CHANNEL, Si, POWER, MOSFET
From Vishay Presicion Group
| Status | ACTIVE |
| Case Connection | DRAIN |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 1000 V |
| Drain Current-Max (ID) | 2.3 A |
| Drain-source On Resistance-Max | 5.6 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Pulsed Drain Current-Max (IDM) | 9.2 A |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
