Product Datasheet Search Results:

IRFBG30-002.pdf1 Pages, 28 KB, Scan
IRFBG30-002
Vishay Presicion Group
3.1 A, 1000 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRFBG30-002PBF.pdf1 Pages, 28 KB, Scan
IRFBG30-002PBF
Vishay Presicion Group
3.1 A, 1000 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Product Details Search Results:

Vishay.com/IRFBG30-002
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.1 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"12 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1454 Bytes - 00:32:31, 06 November 2024
Vishay.com/IRFBG30-002PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"280 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.1 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"12 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-O...
1516 Bytes - 00:32:31, 06 November 2024

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