Product Datasheet Search Results:

IRF150.pdf4 Pages, 126 KB, Scan
IRF150
Fairchild Semiconductor
N-Channel Power MOSFETs, 40 A, 60 V/100 V
IRF150-153.pdf4 Pages, 126 KB, Scan
IRF150-153
Fairchild Semiconductor
N-Channel Power MOSFETs, 40 A, 60 V/100 V
IRF150.pdf4 Pages, 200 KB, Original
IRF150
Fci Semiconductor
POWER MOSFETs
IRF150.pdf4 Pages, 200 KB, Original
IRF150
Frederick Components
Power MOSFET Selection Guide
IRF150.pdf1 Pages, 31 KB, Scan
IRF150
Motorola
European Master Selection Guide 1986
IRF150.pdf5 Pages, 192 KB, Scan
IRF150
General Electric Solid State
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 40A.
IRF150.pdf2 Pages, 126 KB, Scan
IRF150
General Electric
Power Transistor Data Book 1985
IRF150.pdf1 Pages, 41 KB, Original
IRF150
Harris Semiconductor
Power MOSFET Selection Guide
IRF150R.pdf5 Pages, 205 KB, Scan
IRF150R
Harris Semiconductor
Power MOSFET Data Book 1990
IRF150.pdf7 Pages, 150 KB, Original
IRF150
Infineon Technologies Ag
Trans MOSFET N-CH 100V 38A 3-Pin(2+Tab) TO-3
IRF1503PBF.pdf9 Pages, 270 KB, Original
IRF1503PBF
Infineon Technologies Ag
Trans MOSFET N-CH Si 30V 240A 3-Pin(3+Tab) TO-220AB Tube
IRF1503SPBF.pdf11 Pages, 333 KB, Original
IRF1503SPBF
Infineon Technologies Ag
Trans MOSFET N-CH Si 30V 190A 3-Pin(2+Tab) D2PAK Tube
IRF1503STRLPBF.pdf11 Pages, 333 KB, Original
IRF1503STRLPBF
Infineon Technologies Ag
Trans MOSFET N-CH Si 30V 190A 3-Pin(2+Tab) D2PAK T/R
IRF150P220XKMA1.pdf11 Pages, 1093 KB, Original
IRF150P220XKMA1
Infineon Technologies Ag
Trans MOSFET N-CH 150V 316A Tube
IRF150P221XKMA1.pdf11 Pages, 1063 KB, Original
IRF150P221XKMA1
Infineon Technologies Ag
Trans MOSFET N-CH 150V 186A Tube
IRF150.pdf7 Pages, 58 KB, Original
IRF150
Intersil Corporation
40A, 100V, 0.055 ?, N-Channel Power MOSFET
IRF150.pdf7 Pages, 150 KB, Original
IRF150
International Rectifier
38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
IRF1503.pdf10 Pages, 557 KB, Original
IRF1503
International Rectifier
IRF1503
IRF1503L.pdf11 Pages, 654 KB, Original
IRF1503L
International Rectifier
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
IRF1503LPBF.pdf11 Pages, 333 KB, Original
IRF1503LPBF
International Rectifier
MOSFET N-CH 30V 75A TO-262 - IRF1503LPBF
IRF1503PBF.pdf9 Pages, 270 KB, Original
IRF1503PBF
International Rectifier
MOSFET N-CH 30V 75A TO-220AB - IRF1503PBF
IRF1503S.pdf12 Pages, 666 KB, Original
IRF1503S
International Rectifier
IRF1503S
IRF1503SPBF.pdf11 Pages, 333 KB, Original
IRF1503SPBF
International Rectifier
MOSFET N-CH 30V 75A D2PAK - IRF1503SPBF
IRF1503STRLPBF.pdf11 Pages, 333 KB, Original
IRF1503STRLPBF
International Rectifier
MOSFET N-CH 30V 75A D2PAK - IRF1503STRLPBF
IRF1503STRRPBF.pdf12 Pages, 640 KB, Original
IRF1503STRRPBF
International Rectifier
MOSFET N-CH 30V 75A D2PAK - IRF1503STRRPBF
IRF150E.pdf92 Pages, 2885 KB, Scan
IRF150E
International Rectifier
38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
IRF150EA.pdf92 Pages, 2885 KB, Scan
IRF150EA
International Rectifier
38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
IRF150EAPBF.pdf92 Pages, 2885 KB, Scan
IRF150EAPBF
International Rectifier
38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
IRF150EB.pdf92 Pages, 2885 KB, Scan
IRF150EB
International Rectifier
38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
IRF150EBPBF.pdf92 Pages, 2885 KB, Scan
IRF150EBPBF
International Rectifier
38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
IRF150EC.pdf92 Pages, 2885 KB, Scan
IRF150EC
International Rectifier
38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
IRF150ECPBF.pdf92 Pages, 2885 KB, Scan
IRF150ECPBF
International Rectifier
38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
IRF150ED.pdf92 Pages, 2885 KB, Scan
IRF150ED
International Rectifier
38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
IRF150EDPBF.pdf92 Pages, 2885 KB, Scan
IRF150EDPBF
International Rectifier
38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
IRF150EPBF.pdf92 Pages, 2885 KB, Scan
IRF150EPBF
International Rectifier
38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
IRF150PBF.pdf7 Pages, 150 KB, Original
IRF150PBF
International Rectifier
38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
IRF150R.pdf1 Pages, 41 KB, Original
IRF150R
International Rectifier
Rugged Series Power MOSFETs - N-Channel
IRF150.pdf1 Pages, 46 KB, Scan
IRF150
Ixys Corporation
(IRF150 - IRF153) HIGH VOLTAGE POWER MOSFET DIE
IRF150.pdf4 Pages, 217 KB, Scan
IRF150
N/a
FET Data Book
IRF150R.pdf1 Pages, 83 KB, Scan
IRF150R
N/a
Shortform Datasheet & Cross References Data
IRF150.pdf1 Pages, 37 KB, Original
IRF150
National Semiconductor
N-Channel Power MOSFETs
IRF150CF.pdf1 Pages, 31 KB, Original
IRF150CF
National Semiconductor
N-Channel Power MOSFETs - CoolFETS
IRF150.pdf2 Pages, 81 KB, Original
IRF150
Nikkohm
50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
IRF150.pdf5 Pages, 212 KB, Scan
IRF150
Samsung Electronics
N-CHANNEL POWER MOSFETS
IRF150.pdf2 Pages, 74 KB, Scan
IRF150
Semelab Plc.
38 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
IRF150-JQR-B.pdf2 Pages, 74 KB, Scan
IRF150-JQR-B
Semelab Plc.
38 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3

Product Details Search Results:

Infineon.com/IRF150
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"150(W)","Continuous Drain Current":"38(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-3","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1438 Bytes - 23:21:37, 19 September 2024
Infineon.com/IRF1503PBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"240(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Rail\/Tube","Power Dissipation":"330(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1536 Bytes - 23:21:37, 19 September 2024
Infineon.com/IRF1503SPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"190(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Rail\/Tube","Power Dissipation":"200(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1531 Bytes - 23:21:37, 19 September 2024
Infineon.com/IRF1503STRLPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"190(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Power Dissipation":"200(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1539 Bytes - 23:21:37, 19 September 2024
Infineon.com/IRF150P220AKMA1
887 Bytes - 23:21:37, 19 September 2024
Infineon.com/IRF150P220XKMA1
{"Polarity":"N","Gate-Source Voltage (Max)":"20(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"316(A)","Rad Hardened":"No","Drain-Source On-Volt":"150(V)","Packaging":"Rail\/Tube","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Number of Elements":"1"}...
1449 Bytes - 23:21:37, 19 September 2024
Infineon.com/IRF150P221AKMA1
887 Bytes - 23:21:37, 19 September 2024
Infineon.com/IRF150P221XKMA1
{"Polarity":"N","Gate-Source Voltage (Max)":"20(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Rad Hardened":"No","Drain-Source On-Volt":"150(V)","Packaging":"Rail\/Tube","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Number of Elements":"1"}...
1412 Bytes - 23:21:37, 19 September 2024
Irf.com/IRF150
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1484 Bytes - 23:21:37, 19 September 2024
Irf.com/IRF1503LPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"5730pF @ 25V","Series":"HEXFET\u00ae","Standard Package":"50","Supplier Device Package":"TO-262","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Datasheets":"IRF1503SPbF, IRF1503LPbF","Rds On (Max) @ Id, Vgs":"3.3 mOhm @ 140A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube"...
1660 Bytes - 23:21:37, 19 September 2024
Irf.com/IRF1503PBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"75A (Tc)","Gate Charge (Qg) @ Vgs":"200nC @ 10V","Product Photos":"TO-220AB PKG","PCN Assembly\/Origin":"Warehouse Transfer 29\/Jul\/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"3.3 mOhm @ 140A, 10V","Datasheets":"IRF150...
1814 Bytes - 23:21:37, 19 September 2024
Irf.com/IRF1503SPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"75A (Tc)","Gate Charge (Qg) @ Vgs":"200nC @ 10V","Product Photos":"TO-263","PCN Assembly\/Origin":"Warehouse Transfer 29\/Jul\/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"3.3 mOhm @...
1954 Bytes - 23:21:37, 19 September 2024
Irf.com/IRF1503STRLPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"75A (Tc)","Gate Charge (Qg) @ Vgs":"200nC @ 10V","Product Photos":"TO-263","PCN Assembly\/Origin":"Warehouse Transfer 29\/Jul\/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"3.3 mOhm @...
1894 Bytes - 23:21:37, 19 September 2024
Irf.com/IRF1503STRRPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"800","Supplier Device Package":"D2PAK","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Datasheets":"IRF1503S\/L","Rds On (Max) @ Id, Vgs":"3.3 mOhm @ 140A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"200W","Package \/ Case":"TO-263-3, D\u...
1695 Bytes - 23:21:37, 19 September 2024
Irf.com/IRF150E
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1426 Bytes - 23:21:37, 19 September 2024
Irf.com/IRF150EA
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1432 Bytes - 23:21:37, 19 September 2024
Irf.com/IRF150EAPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"...
1497 Bytes - 23:21:37, 19 September 2024
Irf.com/IRF150EB
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1432 Bytes - 23:21:37, 19 September 2024
Irf.com/IRF150EBPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"...
1494 Bytes - 23:21:37, 19 September 2024
Irf.com/IRF150EC
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1432 Bytes - 23:21:37, 19 September 2024
Irf.com/IRF150ECPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"...
1497 Bytes - 23:21:37, 19 September 2024
Irf.com/IRF150ED
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1432 Bytes - 23:21:37, 19 September 2024
Irf.com/IRF150EDPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"...
1497 Bytes - 23:21:37, 19 September 2024
Irf.com/IRF150EPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"...
1491 Bytes - 23:21:37, 19 September 2024
Irf.com/IRF150PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"...
1553 Bytes - 23:21:37, 19 September 2024
Microsemi.com/IRF150
{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Description":"Value","Maximum Continuous Drain Current":"40 A","Package":"3TO-3","Mounting":"Through Hole","Manufacturer":"Microsemi"}...
984 Bytes - 23:21:37, 19 September 2024
Semelab.co.uk/IRF150
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.0550 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","T...
1386 Bytes - 23:21:37, 19 September 2024
Semelab.co.uk/IRF150-JQR-B
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.0550 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","T...
1421 Bytes - 23:21:37, 19 September 2024
Semelab.co.uk/IRF150-JQR-BR1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.0550 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMI...
1482 Bytes - 23:21:37, 19 September 2024
Semelab.co.uk/IRF150-QR-B
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.0550 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","T...
1414 Bytes - 23:21:37, 19 September 2024
Semelab.co.uk/IRF150-QR-EB
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.0550 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","T...
1421 Bytes - 23:21:37, 19 September 2024
Semelab.co.uk/IRF150R1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.0550 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMI...
1445 Bytes - 23:21:37, 19 September 2024
Semelab.co.uk/IRF150SM
{"C(iss) Max. (F)":"3.7n","Absolute Max. Power Diss. (W)":"100","@Pulse Width (s) (Condition)":"300m","V(BR)DSS (V)":"100","I(D) Abs. Max.(A) Drain Curr.":"19","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"170n","r(DS)on Max. (Ohms)":"70m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"108","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"9.0","@I(D) (A) (Test Condition)":"19","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"4.0","V(GS)th Min. (V)":"2.0"...
1290 Bytes - 23:21:37, 19 September 2024
Semelab.co.uk/IRF150SMD
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0810 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"108 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEM...
1488 Bytes - 23:21:37, 19 September 2024
Semelab.co.uk/IRF150SMD-JQR
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0810 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"108 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEM...
1511 Bytes - 23:21:37, 19 September 2024
Semelab.co.uk/IRF150SMD-JQR-B
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0810 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"108 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEM...
1522 Bytes - 23:21:37, 19 September 2024
Semelab.co.uk/IRF150SMD-JQR-BR4
{"Terminal Finish":"GOLD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0810 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"108 A","Channel Type":"N-CHANNEL...
1570 Bytes - 23:21:37, 19 September 2024
Semelab.co.uk/IRF150SMD-JQRR4
{"Terminal Finish":"GOLD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0810 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"108 A","Channel Type":"N-CHANNEL...
1561 Bytes - 23:21:37, 19 September 2024
Semelab.co.uk/IRF150SMDR4
{"Terminal Finish":"GOLD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0810 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"108 A","Channel Type":"N-CHANNEL...
1535 Bytes - 23:21:37, 19 September 2024
Various/IRF150CF
{"@V(DS) (V) (Test Condition)":"10","C(iss) Max. (F)":"3.0n","t(r) Max. (s) Rise time":"100n","I(GSS) Max. (A)":"100n","I(DSS) Min. (A)":"250u","V(BR)DSS (V)":"100","t(f) Max. (s) Fall time.":"100n","g(fs) Min. (S) Trans. conduct.":"9.0","I(D) Abs. Drain Current (A)":"44","Package":"TO-204AE","Military":"N","r(DS)on Max. (Ohms)":".04"}...
800 Bytes - 23:21:37, 19 September 2024
Various/IRF150R
{"C(iss) Max. (F)":"2.0n","Absolute Max. Power Diss. (W)":"150","g(fs) Max, (S) Trans. conduct,":"11","I(D) Abs. Max.(A) Drain Curr.":"25","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"125n","r(DS)on Max. (Ohms)":"55m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"160","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"9.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"20","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Packa...
1294 Bytes - 23:21:37, 19 September 2024
Vishay.com/IRF150CHP
{"Military":"N","r(DS)on Max. (Ohms)":"55m","V(BR)DSS (V)":"100","Package":"Chip"}...
596 Bytes - 23:21:37, 19 September 2024

Documentation and Support

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IRF1503S.pdf1Request
IRF1503.pdf1Request