Product Datasheet Search Results:

IRF150E.pdf92 Pages, 2885 KB, Scan
IRF150E
International Rectifier
38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
IRF150EA.pdf92 Pages, 2885 KB, Scan
IRF150EA
International Rectifier
38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
IRF150EAPBF.pdf92 Pages, 2885 KB, Scan
IRF150EAPBF
International Rectifier
38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
IRF150EB.pdf92 Pages, 2885 KB, Scan
IRF150EB
International Rectifier
38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
IRF150EBPBF.pdf92 Pages, 2885 KB, Scan
IRF150EBPBF
International Rectifier
38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
IRF150EC.pdf92 Pages, 2885 KB, Scan
IRF150EC
International Rectifier
38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
IRF150ECPBF.pdf92 Pages, 2885 KB, Scan
IRF150ECPBF
International Rectifier
38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
IRF150ED.pdf92 Pages, 2885 KB, Scan
IRF150ED
International Rectifier
38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
IRF150EDPBF.pdf92 Pages, 2885 KB, Scan
IRF150EDPBF
International Rectifier
38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
IRF150EPBF.pdf92 Pages, 2885 KB, Scan
IRF150EPBF
International Rectifier
38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE

Product Details Search Results:

Irf.com/IRF150E
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1426 Bytes - 05:09:59, 20 September 2024
Irf.com/IRF150EA
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1432 Bytes - 05:09:59, 20 September 2024
Irf.com/IRF150EAPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"...
1497 Bytes - 05:09:59, 20 September 2024
Irf.com/IRF150EB
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1432 Bytes - 05:09:59, 20 September 2024
Irf.com/IRF150EBPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"...
1494 Bytes - 05:09:59, 20 September 2024
Irf.com/IRF150EC
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1432 Bytes - 05:09:59, 20 September 2024
Irf.com/IRF150ECPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"...
1497 Bytes - 05:09:59, 20 September 2024
Irf.com/IRF150ED
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1432 Bytes - 05:09:59, 20 September 2024
Irf.com/IRF150EDPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"...
1497 Bytes - 05:09:59, 20 September 2024
Irf.com/IRF150EPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"...
1491 Bytes - 05:09:59, 20 September 2024