Product Datasheet Search Results:
4 Pages, 126 KB, Scan- IRF150-153
- Fairchild Semiconductor
- N-Channel Power MOSFETs, 40 A, 60 V/100 V
Product Details Search Results:
Semelab.co.uk/IRF150-JQR-B
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.0550 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","T...
1421 Bytes - 05:25:37, 20 September 2024
Semelab.co.uk/IRF150-JQR-BR1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.0550 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMI...
1482 Bytes - 05:25:37, 20 September 2024
Semelab.co.uk/IRF150-QR-B
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.0550 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","T...
1414 Bytes - 05:25:37, 20 September 2024
Semelab.co.uk/IRF150-QR-EB
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.0550 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","T...
1421 Bytes - 05:25:37, 20 September 2024
