Product Datasheet Search Results:
- GT30J121(Q)
- Toshiba
- IGBT Transistors 600V/30A DIS
Product Details Search Results:
Toshiba.co.jp/GT30J121(Q)
{"Factory Pack Quantity":"50","Continuous Collector Current at 25 C":"30 A","Product Category":"IGBT Transistors","Continuous Collector Current Ic Max":"30 A","Brand":"Toshiba","Collector- Emitter Voltage VCEO Max":"600 V","Mounting Style":"Through Hole","Maximum Gate Emitter Voltage":"+/- 20 V","Minimum Operating Temperature":"- 55 C","Package / Case":"TO-3P","Configuration":"Single","Maximum Operating Temperature":"+ 150 C","RoHS":"Details","Manufacturer":"Toshiba"}...
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Toshiba.semicon-storage.com/GT30J121(Q)
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"30A","Switching Energy":"1mJ (on), 800\u00b5J (off)","Vce(on) (Max) @ Vge, Ic":"2.45V @ 15V, 30A","Td (on/off) @ 25\u00b0C":"90ns/300ns","Input Type":"Standard","Package / Case":"TO-3P-3, SC-65-3","Gate Charge":"-","Product Photos":"TO-3P-3,TO-247-3","Voltage - Collector Emitter Breakdown (Max)":"600V","Reverse Recovery Time (trr)":"-","Datasheets":"GT30J121 -","Standard Package":"50","Test Condition":"300V, 30A, 24 Ohm, 15V","I...
1692 Bytes - 11:07:36, 15 November 2024