GT30J121(Q)
IGBT 600V 30A 170W TO3PN

From Toshiba Semiconductor and Storage

CategoryDiscrete Semiconductor Products
Current - Collector (Ic) (Max)30A
Current - Collector Pulsed (Icm)60A
DatasheetsGT30J121 -
FamilyIGBTs - Single
Gate Charge-
IGBT Type-
Input TypeStandard
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
PackagingTube
Power - Max170W
Product PhotosTO-3P-3,TO-247-3
Reverse Recovery Time (trr)-
Series-
Standard Package50
Supplier Device PackageTO-3P(N)
Switching Energy1mJ (on), 800µJ (off)
Td (on/off) @ 25°C90ns/300ns
Test Condition300V, 30A, 24 Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.45V @ 15V, 30A
Voltage - Collector Emitter Breakdown (Max)600V

External links