GT30J121(Q) IGBT 600V 30A 170W TO3PN
From Toshiba Semiconductor and Storage
Category | Discrete Semiconductor Products |
Current - Collector (Ic) (Max) | 30A |
Current - Collector Pulsed (Icm) | 60A |
Datasheets | GT30J121 - |
Family | IGBTs - Single |
Gate Charge | - |
IGBT Type | - |
Input Type | Standard |
Mounting Type | Through Hole |
Package / Case | TO-3P-3, SC-65-3 |
Packaging | Tube |
Power - Max | 170W |
Product Photos | TO-3P-3,TO-247-3 |
Reverse Recovery Time (trr) | - |
Series | - |
Standard Package | 50 |
Supplier Device Package | TO-3P(N) |
Switching Energy | 1mJ (on), 800µJ (off) |
Td (on/off) @ 25°C | 90ns/300ns |
Test Condition | 300V, 30A, 24 Ohm, 15V |
Vce(on) (Max) @ Vge, Ic | 2.45V @ 15V, 30A |
Voltage - Collector Emitter Breakdown (Max) | 600V |