GT30J121(Q)
IGBT Transistors 600V/30A DIS

From Toshiba

BrandToshiba
Collector- Emitter Voltage VCEO Max600 V
ConfigurationSingle
Continuous Collector Current Ic Max30 A
Continuous Collector Current at 25 C30 A
Factory Pack Quantity50
ManufacturerToshiba
Maximum Gate Emitter Voltage+/- 20 V
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Mounting StyleThrough Hole
Package / CaseTO-3P
Product CategoryIGBT Transistors
RoHSDetails

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