Product Datasheet Search Results:
- 2SA1163-BL
- Toshiba America Electronic Components, Inc.
- 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
- 2SA1163-BL,LF
- Toshiba
- Bipolar Transistors - BJT Transistor for Low Freq. Amplification
- 2SA1163-BL,LF(T
- Toshiba
- Trans GP BJT PNP 120V 0.1A 150mW 3-Pin S-Mini T/R
- 2SA1163BLTE85L
- Toshiba America Electronic Components, Inc.
- 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
- 2SA1163-BL(TE85L,F
- Toshiba
- Trans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/R
- 2SA1163-BL(TE85L,F)
- Toshiba
- Trans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/R
- 2SA1163BLTE85R
- Toshiba America Electronic Components, Inc.
- 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
- 2SA1163-GR
- Toshiba America Electronic Components, Inc.
- 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
Product Details Search Results:
N_a/2SA1163
{"Category":"PNP Transistor, Transistor","Amps":"0.1A","MHz":"100 MHz","Volts":"120V"}...
520 Bytes - 12:01:13, 04 April 2025
Toshiba.co.jp/2SA1163
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-3F1A, SC-59, TO-236MOD, 3 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"200","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"120 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"100 MHz","Number of Elements":"1","Transistor Element Material":"SILICON...
1456 Bytes - 12:01:13, 04 April 2025
Toshiba.co.jp/2SA1163-BL
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-3F1A, SC-59, TO-236MOD, 3 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"350","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"120 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"100 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Te...
1471 Bytes - 12:01:13, 04 April 2025
Toshiba.co.jp/2SA1163BL
{"V(CE)sat Max.(V)":".3","Absolute Max. Power Diss. (W)":"150m","V(BR)CBO (V)":"120","h(FE) Min. Static Current Gain":"350","I(C) Abs.(A) Collector Current":"100m","h(FE) Max. Current gain.":"700","I(CBO) Max. (A)":"100n","Package":"SOT-89","@I(B) (A) (Test Condition)":"1.0m","@V(CE) (V) (Test Condition)":"6.0","f(T) Min. (Hz) Transition Freq":"100M","V(BR)CEO (V)":"120","Military":"N","@I(C) (A) (Test Condition)":"1.0m","C(obo) (Max) (F)":"4.0p"}...
913 Bytes - 12:01:13, 04 April 2025
Toshiba.co.jp/2SA1163-BL,LF
{"Packaging":"Reel","Brand":"Toshiba","Product Category":"Bipolar Transistors - BJT","RoHS":"Details","Manufacturer":"Toshiba"}...
1152 Bytes - 12:01:13, 04 April 2025
Toshiba.co.jp/2SA1163-BL,LF(T
{"Collector Current (DC) ":"0.1(A)","Transistor Polarity":"PNP","Power Dissipation":"0.15(W)","Category ":"Bipolar Small Signal","Mounting":"Surface Mount","Emitter-Base Voltage":"5(V)","Rad Hardened":"No","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 125C","Frequency":"100(MHz)","Output Power":"Not Required(W)","Collector-Base Voltage":"120(V)","DC Current Gain":"350","Package Type":"SMini","Configuration":"Single","Pin Count":"3","Number of E...
1616 Bytes - 12:01:13, 04 April 2025
Toshiba.co.jp/2SA1163BLTE85L
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"350","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"120 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"100 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Tr...
1438 Bytes - 12:01:13, 04 April 2025
Toshiba.co.jp/2SA1163-BL(TE85L,F
{"Emitter- Base Voltage VEBO":"- 5 V","Gain Bandwidth Product fT":"100 MHz","Product Category":"Bipolar Transistors - BJT","Transistor Polarity":"PNP","Factory Pack Quantity":"3000","DC Collector/Base Gain hfe Min":"200","DC Current Gain hFE Max":"700","Collector-Emitter Saturation Voltage":"- 0.3 V","Collector- Emitter Voltage VCEO Max":"- 120 V","Packaging":"Reel","Collector- Base Voltage VCBO":"- 120 V","Mounting Style":"SMD/SMT","Pd - Power Dissipation":"150 mW","Package / Case":"SOT-346","Maximum DC Co...
1733 Bytes - 12:01:13, 04 April 2025
Toshiba.co.jp/2SA1163-BL(TE85L,F)
{"Collector Current (DC) ":"0.1 A","Operating Temperature Classification":"Military","Transistor Polarity":"PNP","Collector Current (DC) (Max)":"0.1 A","Collector-Emitter Voltage":"120 V","Mounting":"Surface Mount","Emitter-Base Voltage":"5 V","Category ":"Bipolar RF","DC Current Gain (Min)":"350","Packaging":"Tape and Reel","Power Dissipation":"0.15 W","Operating Temp Range":"-55C to 125C","Frequency":"100 MHz","Package Type":"SMini","Collector-Base Voltage":"120 V","Rad Hardened":"No","DC Current Gain":"3...
1617 Bytes - 12:01:13, 04 April 2025
Toshiba.co.jp/2SA1163BLTE85R
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"350","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"120 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"100 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transis...
1433 Bytes - 12:01:13, 04 April 2025
Toshiba.co.jp/2SA1163-GR
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-3F1A, SC-59, TO-236MOD, 3 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"200","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"120 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"100 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Te...
1468 Bytes - 12:01:13, 04 April 2025
Toshiba.co.jp/2SA1163GR
{"V(CE)sat Max.(V)":".3","Absolute Max. Power Diss. (W)":"150m","V(BR)CBO (V)":"120","h(FE) Min. Static Current Gain":"200","I(C) Abs.(A) Collector Current":"100m","h(FE) Max. Current gain.":"400","I(CBO) Max. (A)":"100n","Package":"SOT-89","@I(B) (A) (Test Condition)":"1.0m","@V(CE) (V) (Test Condition)":"6.0","f(T) Min. (Hz) Transition Freq":"100M","V(BR)CEO (V)":"120","Military":"N","@I(C) (A) (Test Condition)":"1.0m","C(obo) (Max) (F)":"4.0p"}...
914 Bytes - 12:01:13, 04 April 2025
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