Product Datasheet Search Results:
- 2SA1163GRT5LFT
- Toshiba
- Trans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/R
- 2SA1163GRTE85LF
- Toshiba
- Trans GP BJT PNP 120V 0.1A 3-Pin S-Mini T/R
- 2SA1163GRTE85R
- Toshiba America Electronic Components, Inc.
- 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
Product Details Search Results:
Toshiba.co.jp/2SA1163GR
{"V(CE)sat Max.(V)":".3","Absolute Max. Power Diss. (W)":"150m","V(BR)CBO (V)":"120","h(FE) Min. Static Current Gain":"200","I(C) Abs.(A) Collector Current":"100m","h(FE) Max. Current gain.":"400","I(CBO) Max. (A)":"100n","Package":"SOT-89","@I(B) (A) (Test Condition)":"1.0m","@V(CE) (V) (Test Condition)":"6.0","f(T) Min. (Hz) Transition Freq":"100M","V(BR)CEO (V)":"120","Military":"N","@I(C) (A) (Test Condition)":"1.0m","C(obo) (Max) (F)":"4.0p"}...
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Toshiba.co.jp/2SA1163GRT5LFT
{"Collector Current (DC) ":"0.1 A","Transistor Polarity":"PNP","Collector Current (DC) (Max)":"0.1 A","Collector-Emitter Voltage":"120 V","Mounting":"Surface Mount","Emitter-Base Voltage":"5 V","Category ":"Bipolar RF","Frequency (Max)":"100 MHz","Packaging":"Tape and Reel","Power Dissipation":"0.15 W","Rad Hardened":"No","Frequency":"100 MHz","Package Type":"SMini","Collector-Base Voltage":"120 V","DC Current Gain":"350","DC Current Gain (Min)":"350","Pin Count":"3","Number of Elements":"1"}...
1535 Bytes - 22:10:32, 09 April 2025
Toshiba.co.jp/2SA1163GRTE85LF
{"Rad Hardened":"No","Collector Current (DC) ":"0.1 A","Transistor Polarity":"PNP","Collector-Emitter Voltage":"120 V","Operating Temperature Classification":"Military","Mounting":"Surface Mount","Emitter-Base Voltage":"5 V","Category ":"Bipolar RF","Packaging":"Tape and Reel","Power Dissipation":"0.15 W","Operating Temp Range":"-55C to 125C","Frequency":"100 MHz","Package Type":"SMini","Collector-Base Voltage":"120 V","DC Current Gain":"350","Pin Count":"3","Number of Elements":"1"}...
1531 Bytes - 22:10:32, 09 April 2025
Toshiba.co.jp/2SA1163GRTE85R
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"200","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"120 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"100 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Tr...
1437 Bytes - 22:10:32, 09 April 2025
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