2SA1163-BL(TE85L,F
Bipolar Transistors - BJT PNP Trans -0.1A LN -120V VCEO

From Toshiba

BrandToshiba
Collector- Base Voltage VCBO- 120 V
Collector- Emitter Voltage VCEO Max- 120 V
Collector-Emitter Saturation Voltage- 0.3 V
ConfigurationSingle
DC Collector/Base Gain hfe Min200
DC Current Gain hFE Max700
Emitter- Base Voltage VEBO- 5 V
Factory Pack Quantity3000
Gain Bandwidth Product fT100 MHz
ManufacturerToshiba
Maximum DC Collector Current- 100 mA
Mounting StyleSMD/SMT
Package / CaseSOT-346
PackagingReel
Pd - Power Dissipation150 mW
Product CategoryBipolar Transistors - BJT
RoHSDetails
Transistor PolarityPNP

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