Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Package / Case":"TO-261-4, TO-261AA","Current - Continuous Drain (Id) @ 25\u00b0C":"4A (Ta)","Gate Charge (Qg) @ Vgs":"20nC @ 10V","Product Photos":"SOT223-3L","Product Training Modules":"High Voltage Switches for Power Processing SMPS Power Switch","Rds On (Max) @ Id, Vgs":"100 mOhm @ 4A, 10V","Datasheets":"NDT3055L MA04A Pkg Drawing","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packagi...

{"Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"25 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"4 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER","Package S...

{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"25 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"4 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTA...

{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"25 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"4 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTA...

{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","S...

{"Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"25 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"4 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER","Package S...

{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"25 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"4 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTA...

{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"25 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"4 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTA...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor...

{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHI...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"4(A)","Mounting":"Surface Mount","Operating Temp Range":"-65C to 150C","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Power Dissipation":"3(W)","Rad Hardened":"No","Package Type":"SOT-223","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"C(iss) Max. (F)":"435p","Absolute Max. Power Diss. (W)":"3.0","V(BR)DSS (V)":"60","g(fs) Max, (S) Trans. conduct,":"6.0","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"50n","r(DS)on Max. (Ohms)":".1","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"25","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"3.7","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.0","V(GS)th Min. (V)":"1.0","Package":"SOT-223","Military":"N","td(on) Max (s) On tim...