Product Datasheet Search Results:
- NDT3055LTNR
- Fairchild Semiconductor Corporation
- 4 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
- NDT3055LTNR_NL
- Fairchild Semiconductor Corporation
- 4 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Fairchildsemi.com/NDT3055LTNR
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor...
1510 Bytes - 01:47:52, 15 November 2024
Fairchildsemi.com/NDT3055LTNR_NL
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHI...
1520 Bytes - 01:47:52, 15 November 2024
Documentation and Support
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L_W_BENDTSEN_TESTER.pdf | 1.23 | 1 | Request | |
L_W_AUTOLINE_BENDTSEN_ROUGHNESS.pdf | 0.16 | 1 | Request | |
TDS000516_CABLE_TIE_DETECTABLE_NDT_SERIES.pdf | 0.46 | 1 | Request | |
K3GN-NDT1_24VDC.pdf | 0.43 | 1 | Request | |
K3GN-NDT1-FLK_24VDC.pdf | 0.43 | 1 | Request | |
ASC_TS_SP_300_NDTS.pdf | 0.19 | 1 | Request | |
SCON_85FNDT_R0_EN.pdf | 0.17 | 1 | Request |