Product Datasheet Search Results:
- IRFF320
- General Electric
- Power Transistor Data Book 1985
- IRFF320
- Harris Semiconductor
- Power MOSFET Data Book 1990
- IRFF320R
- Harris Semiconductor
- Power MOSFET Data Book 1990
- IRFF320
- Infineon Technologies Ag
- Trans MOSFET N-CH 400V 2A 3-Pin TO-39
- IRFF320
- Intersil Corporation
- 2.5A, 400V, 1.800 ?, N-Channel Power MOSFET
- IRFF320
- International Rectifier
- 2 A, 400 V, 1.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
- IRFF320PBF
- International Rectifier
- 2 A, 400 V, 1.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
- IRFF320R
- International Rectifier
- Rugged Series Power MOSFETs - N-Channel
- IRFF320
- Semelab Plc.
- 2 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
- IRFF320-JQR-B
- Semelab Plc.
- 2 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Product Details Search Results:
Infineon.com/IRFF320
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"20(W)","Continuous Drain Current":"2(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"400(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...
1441 Bytes - 02:02:10, 15 November 2024
Irf.com/IRFF320
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"0.2420 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.9 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"...
1448 Bytes - 02:02:10, 15 November 2024
Irf.com/IRFF320PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"0.2420 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.9 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-...
1515 Bytes - 02:02:10, 15 November 2024
Semelab.co.uk/IRFF320
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"TO-39, 3 PIN","Pulsed Drain Current-Max (IDM)":"10 A","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE ...
1341 Bytes - 02:02:10, 15 November 2024
Semelab.co.uk/IRFF320-JQR-B
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"TO-39, 3 PIN","Pulsed Drain Current-Max (IDM)":"10 A","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE ...
1377 Bytes - 02:02:10, 15 November 2024
Semelab.co.uk/IRFF320-JQR-BR1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.8 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...
1435 Bytes - 02:02:10, 15 November 2024
Semelab.co.uk/IRFF320R1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.8 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...
1401 Bytes - 02:02:10, 15 November 2024
Various/IRFF320R
{"C(iss) Max. (F)":"450p","Absolute Max. Power Diss. (W)":"20","V(BR)DSS (V)":"400","g(fs) Max, (S) Trans. conduct,":"2.0","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"100n","r(DS)on Max. (Ohms)":"1.8","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"10","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"1.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"1.3","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-205AF","...
1264 Bytes - 02:02:10, 15 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
W0428RF320.pdf | 0.13 | 1 | Request | |
W0428SF320.pdf | 0.13 | 1 | Request | |
5SDA16F3206.pdf | 0.03 | 1 | Request | |
5SDA21F3204.pdf | 0.33 | 1 | Request | |
5SDA19F3205.pdf | 0.03 | 1 | Request | |
EF3200XS.pdf | 0.24 | 1 | Request | |
US2:V2F3204.pdf | 0.87 | 1 | Request | |
US2:22FUF320S.pdf | 1.19 | 1 | Request | |
US2:V7F3205A.pdf | 0.85 | 1 | Request | |
US2:14FUF320L.pdf | 1.19 | 1 | Request | |
US2:22FUF320H.pdf | 1.19 | 1 | Request | |
US2:14FUF320C.pdf | 1.19 | 1 | Request |