Product Datasheet Search Results:

IRFF320.pdf2 Pages, 123 KB, Scan
IRFF320
General Electric
Power Transistor Data Book 1985
IRFF320.pdf5 Pages, 182 KB, Scan
IRFF320
Harris Semiconductor
Power MOSFET Data Book 1990
IRFF320R.pdf5 Pages, 194 KB, Scan
IRFF320R
Harris Semiconductor
Power MOSFET Data Book 1990
IRFF320.pdf7 Pages, 919 KB, Original
IRFF320
Infineon Technologies Ag
Trans MOSFET N-CH 400V 2A 3-Pin TO-39
IRFF320.pdf7 Pages, 324 KB, Original
IRFF320
Intersil Corporation
2.5A, 400V, 1.800 ?, N-Channel Power MOSFET
IRFF320.pdf7 Pages, 195 KB, Original
IRFF320
International Rectifier
2 A, 400 V, 1.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
IRFF320PBF.pdf7 Pages, 195 KB, Original
IRFF320PBF
International Rectifier
2 A, 400 V, 1.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
IRFF320R.pdf1 Pages, 48 KB, Original
IRFF320R
International Rectifier
Rugged Series Power MOSFETs - N-Channel
IRFF320.pdf2 Pages, 121 KB, Scan
IRFF320
N/a
FET Data Book
IRFF320R.pdf1 Pages, 81 KB, Scan
IRFF320R
N/a
Shortform Datasheet & Cross References Data
IRFF320.pdf2 Pages, 23 KB, Original
IRFF320
Semelab Plc.
2 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
IRFF320-JQR-B.pdf2 Pages, 23 KB, Original
IRFF320-JQR-B
Semelab Plc.
2 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

Product Details Search Results:

Infineon.com/IRFF320
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"20(W)","Continuous Drain Current":"2(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"400(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...
1441 Bytes - 02:02:10, 15 November 2024
Irf.com/IRFF320
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"0.2420 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.9 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"...
1448 Bytes - 02:02:10, 15 November 2024
Irf.com/IRFF320PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"0.2420 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.9 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-...
1515 Bytes - 02:02:10, 15 November 2024
Semelab.co.uk/IRFF320
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"TO-39, 3 PIN","Pulsed Drain Current-Max (IDM)":"10 A","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE ...
1341 Bytes - 02:02:10, 15 November 2024
Semelab.co.uk/IRFF320-JQR-B
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"TO-39, 3 PIN","Pulsed Drain Current-Max (IDM)":"10 A","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE ...
1377 Bytes - 02:02:10, 15 November 2024
Semelab.co.uk/IRFF320-JQR-BR1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.8 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...
1435 Bytes - 02:02:10, 15 November 2024
Semelab.co.uk/IRFF320R1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"WIRE","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.8 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...
1401 Bytes - 02:02:10, 15 November 2024
Various/IRFF320R
{"C(iss) Max. (F)":"450p","Absolute Max. Power Diss. (W)":"20","V(BR)DSS (V)":"400","g(fs) Max, (S) Trans. conduct,":"2.0","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"100n","r(DS)on Max. (Ohms)":"1.8","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"10","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"1.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"1.3","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-205AF","...
1264 Bytes - 02:02:10, 15 November 2024

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