IRFF320R1
2 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

From Semelab Plc.

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min400 V
Drain Current-Max (ID)2 A
Drain-source On Resistance-Max1.8 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionTO-39, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialMETAL
Package ShapeROUND
Package StyleCYLINDRICAL
Pulsed Drain Current-Max (IDM)10 A
Terminal FinishTIN SILVER COPPER
Terminal FormWIRE
Terminal PositionBOTTOM
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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