Product Datasheet Search Results:

IRF9130E.pdf92 Pages, 2885 KB, Scan
IRF9130E
International Rectifier
11 A, 100 V, 0.35 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF9130EA.pdf92 Pages, 2885 KB, Scan
IRF9130EA
International Rectifier
11 A, 100 V, 0.35 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF9130EAPBF.pdf92 Pages, 2885 KB, Scan
IRF9130EAPBF
International Rectifier
11 A, 100 V, 0.35 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF9130EB.pdf92 Pages, 2885 KB, Scan
IRF9130EB
International Rectifier
11 A, 100 V, 0.35 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF9130EBPBF.pdf92 Pages, 2885 KB, Scan
IRF9130EBPBF
International Rectifier
11 A, 100 V, 0.35 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF9130EC.pdf92 Pages, 2885 KB, Scan
IRF9130EC
International Rectifier
11 A, 100 V, 0.35 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF9130ECPBF.pdf92 Pages, 2885 KB, Scan
IRF9130ECPBF
International Rectifier
11 A, 100 V, 0.35 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF9130ED.pdf92 Pages, 2885 KB, Scan
IRF9130ED
International Rectifier
11 A, 100 V, 0.35 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF9130EDPBF.pdf92 Pages, 2885 KB, Scan
IRF9130EDPBF
International Rectifier
11 A, 100 V, 0.35 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF9130EPBF.pdf92 Pages, 2885 KB, Scan
IRF9130EPBF
International Rectifier
11 A, 100 V, 0.35 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA

Product Details Search Results:

Irf.com/IRF9130E
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"81 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"50 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1425 Bytes - 12:16:44, 15 November 2024
Irf.com/IRF9130EA
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"81 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"50 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1433 Bytes - 12:16:44, 15 November 2024
Irf.com/IRF9130EAPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"81 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"50 A","Channel Type":"P-CHANNEL","FET Technology":"MET...
1502 Bytes - 12:16:44, 15 November 2024
Irf.com/IRF9130EB
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"81 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"50 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1435 Bytes - 12:16:44, 15 November 2024
Irf.com/IRF9130EBPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"81 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"50 A","Channel Type":"P-CHANNEL","FET Technology":"MET...
1500 Bytes - 12:16:44, 15 November 2024
Irf.com/IRF9130EC
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"81 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"50 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1435 Bytes - 12:16:44, 15 November 2024
Irf.com/IRF9130ECPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"81 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"50 A","Channel Type":"P-CHANNEL","FET Technology":"MET...
1498 Bytes - 12:16:44, 15 November 2024
Irf.com/IRF9130ED
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"81 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"50 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1432 Bytes - 12:16:44, 15 November 2024
Irf.com/IRF9130EDPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"81 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"50 A","Channel Type":"P-CHANNEL","FET Technology":"MET...
1502 Bytes - 12:16:44, 15 November 2024
Irf.com/IRF9130EPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"81 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"50 A","Channel Type":"P-CHANNEL","FET Technology":"MET...
1490 Bytes - 12:16:44, 15 November 2024

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