Product Datasheet Search Results:

IRF9130EA.pdf92 Pages, 2885 KB, Scan
IRF9130EA
International Rectifier
11 A, 100 V, 0.35 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF9130EAPBF.pdf92 Pages, 2885 KB, Scan
IRF9130EAPBF
International Rectifier
11 A, 100 V, 0.35 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA

Product Details Search Results:

Irf.com/IRF9130EA
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"81 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"50 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1433 Bytes - 12:54:19, 15 November 2024
Irf.com/IRF9130EAPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"81 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"50 A","Channel Type":"P-CHANNEL","FET Technology":"MET...
1502 Bytes - 12:54:19, 15 November 2024

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