Product Details Search Results:
Nxp.com/BSP255135
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"P-CHANNEL","Pulsed Drain Current-Max (IDM)":"1.3 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"0.3250 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":...
1357 Bytes - 22:14:08, 27 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 1SDX255135R1.pdf | 0.06 | 1 | Request |
