BSP255135 0.325 A, 300 V, 17 ohm, P-CHANNEL, Si, POWER, MOSFET
From NXP
| Status | ACTIVE |
| Case Connection | DRAIN |
| Channel Type | P-CHANNEL |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 300 V |
| Drain Current-Max (ID) | 0.3250 A |
| Drain-source On Resistance-Max | 17 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Pulsed Drain Current-Max (IDM) | 1.3 A |
| Surface Mount | Yes |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
