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BSP129E7941.pdf7 Pages, 305 KB, Original
BSP129E7941
Infineon Technologies Ag
0.2 A, 240 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Infineon.com/BSP129E7941
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.7 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"20 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"0.6000 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...
1447 Bytes - 04:58:40, 22 November 2024

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