Product Datasheet Search Results:
- BSP129E7941
- Infineon Technologies Ag
- 0.2 A, 240 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Infineon.com/BSP129E7941
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.7 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"20 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"0.6000 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...
1447 Bytes - 04:58:40, 22 November 2024
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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BSP129.pdf | 0.22 | 1 | Request |