BSP129E7941 0.2 A, 240 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET
From Infineon Technologies AG
| Status | ACTIVE |
| Case Connection | DRAIN |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 240 V |
| Drain Current-Max (ID) | 0.2000 A |
| Drain-source On Resistance-Max | 20 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Operating Mode | DEPLETION |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Power Dissipation Ambient-Max | 1.7 W |
| Pulsed Drain Current-Max (IDM) | 0.6000 A |
| Surface Mount | Yes |
| Terminal Finish | MATTE TIN |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
