Product Datasheet Search Results:
1 Pages, 36 KB, Scan- 2SK619
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET
Product Details Search Results:
Hitachi.co.jp/2SK619
{"@V(DS) (V) (Test Condition)":"10","C(iss) Max. (F)":"10p","Absolute Max. Power Diss. (W)":"10","I(DSS) Min. (A)":"1.0m","@(VDS) (V) (Test Condition)":"9.0","V(BR)DSS (V)":"70","g(fs) Min. (S) Trans. conduct.":"90m","V(BR)GSS (V)":"9.0","@I(D) (A) (Test Condition)":"200m","I(D) Abs. Drain Current (A)":"0.3","Package":"TO-126","Military":"N","g(fs) Max, (S) Trans. conduct,":"130m"}...
871 Bytes - 15:38:32, 17 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| SK32SK310.pdf | 0.14 | 1 | Request | |
| SK12SK110.pdf | 0.13 | 1 | Request | |
| SK22SK210.pdf | 0.13 | 1 | Request | |
| SS5Y3-12SKAN-16B-N.pdf | 67.31 | 1 | Request | |
| SS5Y3-12SKAN-08U-D.pdf | 67.31 | 1 | Request | |
| SS5Y5-12SKAN-06B-ND.pdf | 67.31 | 1 | Request | |
| 6AG3111-2SK30-0AB0-ZD30D61M10S10.pdf | 8.78 | 1 | Request | |
| 6AG3111-2SK30-0AB0-ZM10.pdf | 8.78 | 1 | Request | |
| 6AG3111-2SK30-0AB0-ZD61S10.pdf | 8.78 | 1 | Request | |
| 6AG3111-2SK30-0AB0-ZD61M10.pdf | 8.78 | 1 | Request | |
| 7KG6101-2SK10.pdf | 1.28 | 1 | Request | |
| 6AG3111-2SK30-0AB0-ZD30.pdf | 8.78 | 1 | Request |
