2SK619 N-Channel Enhancement MOSFET
From Hitachi Semiconductor
| @(VDS) (V) (Test Condition) | 9.0 |
| @I(D) (A) (Test Condition) | 200m |
| @V(DS) (V) (Test Condition) | 10 |
| Absolute Max. Power Diss. (W) | 10 |
| C(iss) Max. (F) | 10p |
| I(D) Abs. Drain Current (A) | 0.3 |
| I(DSS) Min. (A) | 1.0m |
| Military | N |
| Package | TO-126 |
| V(BR)DSS (V) | 70 |
| V(BR)GSS (V) | 9.0 |
| g(fs) Max, (S) Trans. conduct, | 130m |
| g(fs) Min. (S) Trans. conduct. | 90m |
