Product Datasheet Search Results:
4 Pages, 109 KB, Original- 2SK3580-01MR
- Fuji Electric
- 2SK3580-01MR
4 Pages, 254 KB, Original- 2SK3581-01L
- Fuji Electric
- 2SK3581-01L
4 Pages, 254 KB, Original- 2SK3581-01S
- Fuji Electric
- 2SK3581-01S
4 Pages, 254 KB, Original- 2SK3581-01SJ
- Fuji Electric
- 2SK3581-01SJ
4 Pages, 92 KB, Original- 2SK3586
- Fuji Electric Co., Ltd.
- N CHANNEL SILICON POWER MOSFET
4 Pages, 95 KB, Original- 2SK3586-01
- Fuji Electric
- 2SK3586-01
4 Pages, 96 KB, Original- 2SK3587-01MR
- Fuji Electric
- 2SK3587-01MR
4 Pages, 250 KB, Original- 2SK3588-01L
- Fuji Electric
- 2SK3588-01L
4 Pages, 250 KB, Original- 2SK3588-01S
- Fuji Electric
- 2SK3588-01S
4 Pages, 250 KB, Original- 2SK3588-01SJ
- Fuji Electric
- 2SK3588-01SJ
4 Pages, 101 KB, Original- 2SK3589
- Fuji Electric Co., Ltd.
- N-CHANNEL SILICON POWER MOSFET
4 Pages, 93 KB, Original- 2SK3589-01
- Fuji Electric
- 2SK3589-01
Product Details Search Results:
Fujielectric.co.jp/2SK3580-01MR
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.16 W","Avalanche Energy Rating (Eas)":"155 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1557 Bytes - 08:09:18, 24 November 2024
Fujielectric.co.jp/2SK3581-01L
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.67 W","Avalanche Energy Rating (Eas)":"212 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"64 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1517 Bytes - 08:09:18, 24 November 2024
Fujielectric.co.jp/2SK3581-01S
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.67 W","Avalanche Energy Rating (Eas)":"212 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"64 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCT...
1551 Bytes - 08:09:18, 24 November 2024
Fujielectric.co.jp/2SK3581-01SJ
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.67 W","Avalanche Energy Rating (Eas)":"212 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4600 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"64 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCT...
1521 Bytes - 08:09:18, 24 November 2024
Fujielectric.co.jp/2SK3586-01
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.02 W","Avalanche Energy Rating (Eas)":"465 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"50 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"200 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICON...
1519 Bytes - 08:09:18, 24 November 2024
Fujielectric.co.jp/2SK3587-01MR
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.16 W","Avalanche Energy Rating (Eas)":"319 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"73 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"292 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICON...
1559 Bytes - 08:09:18, 24 November 2024
Fujielectric.co.jp/2SK3588-01L
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.02 W","Avalanche Energy Rating (Eas)":"319 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"73 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"292 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICON...
1518 Bytes - 08:09:18, 24 November 2024
Fujielectric.co.jp/2SK3588-01S
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.02 W","Avalanche Energy Rating (Eas)":"319 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"73 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"292 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUC...
1553 Bytes - 08:09:18, 24 November 2024
Fujielectric.co.jp/2SK3588-01SJ
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.02 W","Avalanche Energy Rating (Eas)":"319 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"73 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"292 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUC...
1521 Bytes - 08:09:18, 24 November 2024
Fujielectric.co.jp/2SK3589-01
{"Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"2.4 W","Avalanche Energy Rating (Eas)":"319 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.9 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"292 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...
1537 Bytes - 08:09:18, 24 November 2024
Fuji_semiconductor/2SK3586-01
{"Category":"Power MOSFET","Maximum Drain Source Voltage":"100 V","Typical Gate Charge @ Vgs":"52 nC @ 10 V","Dimensions":"10 x 4.5 x 15 mm","Channel Mode":"Enhancement","Maximum Power Dissipation":"270 W","Typical Turn On Delay Time":"20 ns","Channel Type":"N","Length":"10 mm","Package Type":"TO-220AB","Number of Elements per Chip":"1","Maximum Continuous Drain Current":"\u00b173 A","Mounting Type":"Through Hole","Configuration":"Single","Maximum Operating Temperature":"+150 \u00b0C","Pin Count":"3","Forwa...
1845 Bytes - 08:09:18, 24 November 2024
Toshiba.co.jp/2SK358
678 Bytes - 08:09:18, 24 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK3588-01S.pdf | 0.24 | 1 | Request | |
| 2SK3580-01MR.pdf | 0.10 | 1 | Request | |
| 2SK3581-01L.pdf | 0.25 | 1 | Request | |
| 2SK3588-01SJ.pdf | 0.24 | 1 | Request | |
| 2SK3589-01.pdf | 0.09 | 1 | Request | |
| 2SK3581-01S.pdf | 0.25 | 1 | Request | |
| 2SK3581-01SJ.pdf | 0.25 | 1 | Request | |
| 2SK3587-01MR.pdf | 0.09 | 1 | Request | |
| 2SK3586-01.pdf | 0.09 | 1 | Request | |
| 2SK3588-01L.pdf | 0.24 | 1 | Request |
