2SK3586-01 MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 19Milliohms; ID +/-73A; TO-220AB; PD 270W; -55
From Fuji Semiconductor
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Dimensions | 10 x 4.5 x 15 mm |
| Forward Transconductance | 30 S |
| Length | 10 mm |
| Maximum Continuous Drain Current | ±73 A |
| Maximum Drain Source Voltage | 100 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 270 W |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-220AB |
| Pin Count | 3 |
| Typical Gate Charge @ Vgs | 52 nC @ 10 V |
| Typical Turn On Delay Time | 20 ns |
