Product Datasheet Search Results:
- 2SK3589-01
- Fuji Electric
- 2SK3589-01
Product Details Search Results:
Fujielectric.co.jp/2SK3589-01
{"Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"2.4 W","Avalanche Energy Rating (Eas)":"319 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.9 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"292 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...
1537 Bytes - 17:20:30, 18 November 2024
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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2SK3589-01.pdf | 0.09 | 1 | Request |