Product Datasheet Search Results:

2SC3416E.pdf1 Pages, 83 KB, Scan
2SC3416E
N/a
Transistor Shortform Datasheet & Cross References
2SC3416E.pdf4 Pages, 146 KB, Original
2SC3416E
On Semiconductor L.l.c.
0.1 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-126
2SC3416E-CD.pdf1 Pages, 70 KB, Scan
2SC3416E-CD
On Semiconductor L.l.c.
0.1 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-126
2SC3416E-LS.pdf1 Pages, 70 KB, Scan
2SC3416E-LS
On Semiconductor L.l.c.
0.1 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-126
2SC3416E-LT.pdf1 Pages, 70 KB, Scan
2SC3416E-LT
On Semiconductor L.l.c.
0.1 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-126
2SC3416E-RA.pdf1 Pages, 70 KB, Scan
2SC3416E-RA
On Semiconductor L.l.c.
0.1 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-126
2SC3416E-SA.pdf1 Pages, 70 KB, Scan
2SC3416E-SA
On Semiconductor L.l.c.
0.1 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-126
2SC3416E-YA.pdf1 Pages, 70 KB, Scan
2SC3416E-YA
On Semiconductor L.l.c.
0.1 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-126
2SC3416E.pdf4 Pages, 301 KB, Scan
2SC3416E
Sanyo Semiconductor
PNP/NPN Epitaxial Planar Silicon Transistors

Product Details Search Results:

Onsemi.com/2SC3416E
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Number of Terminals":"3","DC Current Gain-Min (hFE)":"100","Collector-emitter Voltage-Max":"200 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"70 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGU...
1289 Bytes - 08:45:09, 28 November 2024
Onsemi.com/2SC3416E-CD
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"100","Collector-emitter Voltage-Max":"200 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"70 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"GENERAL P...
1338 Bytes - 08:45:09, 28 November 2024
Onsemi.com/2SC3416E-LS
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"100","Collector-emitter Voltage-Max":"200 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"70 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"GENERAL P...
1340 Bytes - 08:45:09, 28 November 2024
Onsemi.com/2SC3416E-LT
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"100","Collector-emitter Voltage-Max":"200 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"70 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"GENERAL P...
1340 Bytes - 08:45:09, 28 November 2024
Onsemi.com/2SC3416E-RA
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"100","Collector-emitter Voltage-Max":"200 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"70 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"GENERAL P...
1340 Bytes - 08:45:09, 28 November 2024
Onsemi.com/2SC3416E-SA
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"100","Collector-emitter Voltage-Max":"200 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"70 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"GENERAL P...
1340 Bytes - 08:45:09, 28 November 2024
Onsemi.com/2SC3416E-YA
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"100","Collector-emitter Voltage-Max":"200 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"70 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Type":"GENERAL P...
1338 Bytes - 08:45:09, 28 November 2024

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