2SC3416E
0.1 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-126

From ON Semiconductor L.L.C.

StatusACTIVE
Collector Current-Max (IC)0.1000 A
Collector-emitter Voltage-Max200 V
ConfigurationSINGLE
DC Current Gain-Min (hFE)100
Number of Elements1
Number of Terminals3
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Power Dissipation Ambient-Max1.2 W
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationAMPLIFIER
Transistor Element MaterialSILICON
Transistor PolarityNPN
Transistor TypeGENERAL PURPOSE POWER
Transition Frequency-Nom (fT)70 MHz

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