Datasheet.Directory

{"C(iss) Max. (F)":"200p","Absolute Max. Power Diss. (W)":"8.33","g(fs) Max, (S) Trans. conduct,":"2.0","I(D) Abs. Max.(A) Drain Curr.":"1.0","@V(GS) (V) (Test Condition)":"5.0","t(d)off Max. (s) Off time":"45n","r(DS)on Max. (Ohms)":"2.6","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"500m","V(BR)GSS (V)":"10","@I(D) (A) (Test Condition)":"1.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.0","V(GS)th Min. (V)":"1.0","Package":"TO-205AF","I(DSS) ...

{"C(iss) Max. (F)":"200p","Absolute Max. Power Diss. (W)":"8.33","g(fs) Max, (S) Trans. conduct,":"2.0","I(D) Abs. Max.(A) Drain Curr.":"1.0","@V(GS) (V) (Test Condition)":"5.0","t(d)off Max. (s) Off time":"45n","r(DS)on Max. (Ohms)":"2.6","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"500m","V(BR)GSS (V)":"10","@I(D) (A) (Test Condition)":"1.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.0","V(GS)th Min. (V)":"1.0","Package":"TO-205AF","I(DSS) ...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"2.6 Ohm @ 1.07A, 5V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","Series":"-","Package / Case":"TO-205AF Metal Can","Supplier Device Package":"TO-39","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6901","Power - Max":"8.33W","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","Current - Continuous Drain (Id) @ 25\u00b0C":"1.69A...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"80 ns","Typical Turn-Off Delay Time":"45 ns","Description":"Value","Maximum Continuous Drain Current":"1.69 A","Package":"3TO-39","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b110 V","Typical Turn-On Delay Time":"25 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"1400@5V mOhm","Manufacturer":"Microsemi"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"80 ns","Typical Turn-Off Delay Time":"45 ns","Description":"Value","Maximum Continuous Drain Current":"1.69 A","Package":"3TO-39","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b110 V","Typical Turn-On Delay Time":"25 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"1400@5V mOhm","Manufacturer":"Microsemi"}...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"1.4 Ohm @ 1.07A, 5V","FET Feature":"Logic Level Gate","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","Series":"Military, MIL-PRF-19500/570","Package / Case":"TO-205AF Metal Can","Supplier Device Package":"TO-205AF (TO-39)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6901","Power - Max":"8.33W","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","Curren...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"1.4 Ohm @ 1.07A, 5V","FET Feature":"Logic Level Gate","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","Series":"Military, MIL-PRF-19500/570","Package / Case":"TO-205AF Metal Can","Supplier Device Package":"TO-205AF (TO-39)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6901","Power - Max":"8.33W","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","Curren...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"1.4 Ohm @ 1.07A, 5V","FET Feature":"Logic Level Gate","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","Series":"Military, MIL-PRF-19500/570","Package / Case":"TO-205AF Metal Can","Supplier Device Package":"TO-205AF (TO-39)","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6901","Power - Max":"8.33W","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","Curren...

{"C(iss) Max. (F)":"200p","Absolute Max. Power Diss. (W)":"8.33","g(fs) Max, (S) Trans. conduct,":"2.0","I(D) Abs. Max.(A) Drain Curr.":"1.0","@V(GS) (V) (Test Condition)":"5.0","t(d)off Max. (s) Off time":"45n","r(DS)on Max. (Ohms)":"2.6","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"500m","V(BR)GSS (V)":"10","@I(D) (A) (Test Condition)":"1.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.0","V(GS)th Min. (V)":"1.0","Package":"TO-205AF","I(DSS) ...