2N6901
N-Channel Enhancement MOSFET

From Various

@Freq. (Hz) (Test Condition)1.0M
@I(D) (A) (Test Condition)1.0
@Temp (°C) (Test Condition)125
@V(DS) (V) (Test Condition)25
@V(GS) (V) (Test Condition)5.0
Absolute Max. Power Diss. (W)8.33
C(iss) Max. (F)200p
I(D) Abs. Drain Current (A)1.5
I(D) Abs. Max.(A) Drain Curr.1.0
I(DSS) Max. (A)50u
I(DSS) Min. (A)1.0u
I(GSS) Max. (A)100n
MilitaryN
PackageTO-205AF
V(BR)DSS (V)100
V(BR)GSS (V)10
V(GS)th Max. (V)2.0
V(GS)th Min. (V)1.0
g(fs) Max, (S) Trans. conduct,2.0
g(fs) Min. (S) Trans. conduct.500m
r(DS)on Max. (Ohms)2.6
t(d)off Max. (s) Off time45n
t(f) Max. (s) Fall time.25n
t(r) Max. (s) Rise time45n
td(on) Max (s) On time delay25n

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