Product Datasheet Search Results:
- 2N6052JTXV
- Motorola
- Motorola Semiconductor Data & Cross Reference Book
- 2N6052JAN
- New England Semiconductor
- PNP DARLINGTON POWER SILICON TRANSISTOR
- 2N6052JANTX
- New England Semiconductor
- PNP DARLINGTON POWER SILICON TRANSISTOR
- 2N6052JANTXV
- Microsemi
- Trans Darlington PNP 100V 12A 3-Pin(2+Tab) TO-3
- 2N6052JTX
- New England Semiconductor
- BJT, PNP, Darlington Power Transistor, IC 12A
- 2N6052JTXV
- New England Semiconductor
- BJT, PNP, Darlington Power Transistor, IC 12A
Product Details Search Results:
Microsemi.com/2N6052JANTXV
{"Polarity":"PNP","Collector Current (DC) ":"12 A","Collector-Emitter Saturation Voltage":"3 V","Base-Emitter Saturation Voltage (Max)":"4 V","Collector-Emitter Voltage":"100 V","Mounting":"Through Hole","Emitter-Base Voltage":"5 V","Rad Hardened":"No","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"TO-3","Collector-Base Voltage":"100 V","DC Current Gain":"1000","Pin Count":"2 +Tab","Number of Elements":"1"}...
1483 Bytes - 07:49:30, 21 September 2024