Product Datasheet Search Results:

2N6052JTXV.pdf1 Pages, 43 KB, Scan
2N6052JTXV
Motorola
Motorola Semiconductor Data & Cross Reference Book
2N6052JTXV.pdf2 Pages, 62 KB, Original
2N6052JTXV
New England Semiconductor
BJT, PNP, Darlington Power Transistor, IC 12A

Product Details Search Results:

Microsemi.com/2N6052JANTXV
{"Polarity":"PNP","Collector Current (DC) ":"12 A","Collector-Emitter Saturation Voltage":"3 V","Base-Emitter Saturation Voltage (Max)":"4 V","Collector-Emitter Voltage":"100 V","Mounting":"Through Hole","Emitter-Base Voltage":"5 V","Rad Hardened":"No","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"TO-3","Collector-Base Voltage":"100 V","DC Current Gain":"1000","Pin Count":"2 +Tab","Number of Elements":"1"}...
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