Datasheet.Directory

{"C(iss) Max. (F)":"40p","Absolute Max. Power Diss. (W)":"830m","g(fs) Max, (S) Trans. conduct,":"200m","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":"5.0","@V(DS) (V) (Test Condition)":"10","I(GSS) Max. (A)":"10n","V(BR)GSS (V)":"15","@I(D) (A) (Test Condition)":"200m","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"3.0","V(GS)th Min. (V)":".8","Package":"TO-92","Military":"N","I(DSS) Max. (A)":"500n","V(BR)DSS (V)":"60","Thermal Resistance Junc-Amb.":"150","@Temp (°C) (Test Conditi...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3V @ 1mA","Input Capacitance (Ciss) @ Vds":"60pF @ 10V","Series":"-","Standard Package":"10","Supplier Device Package":"TO-92-3","Datasheets":"BS170","Rds On (Max) @ Id, Vgs":"5 Ohm @ 200mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Cut Tape (CT)","Power - Max":"350mW","Package / Case":"TO-226-3, TO-92-3 (TO-226A...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3V @ 1mA","Package / Case":"TO-226-3, TO-92-3 (TO-226AA) Formed Leads","Current - Continuous Drain (Id) @ 25\u00b0C":"500mA (Ta)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","PCN Assembly/Origin":"TMOS7 Wafer Fab Expansion 04/Dec/2013","Rds On (Max) @ Id, Vgs":"5 Ohm @ 200mA, 10V","Datasheets":"BS170","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"2,000",...