BS170RLRA
N-Channel Enhancement MOSFET

From Motorola

@Freq. (Hz) (Test Condition)1M
@I(D) (A) (Test Condition)200m
@Temp (°C) (Test Condition)25
@V(DS) (V) (Test Condition)10
@V(GS) (V) (Test Condition)10
Absolute Max. Power Diss. (W)830m
C(iss) Max. (F)40p
I(D) Abs. Drain Current (A)500m
I(DSS) Max. (A)500n
I(GSS) Max. (A)10n
MilitaryN
PackageTO-92
Thermal Resistance Junc-Amb.150
V(BR)DSS (V)60
V(BR)GSS (V)15
V(GS)th Max. (V)3.0
V(GS)th Min. (V).8
g(fs) Max, (S) Trans. conduct,200m
r(DS)on Max. (Ohms)5.0

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