BS170RLRA N-Channel Enhancement MOSFET
From Motorola
@Freq. (Hz) (Test Condition) | 1M |
@I(D) (A) (Test Condition) | 200m |
@Temp (°C) (Test Condition) | 25 |
@V(DS) (V) (Test Condition) | 10 |
@V(GS) (V) (Test Condition) | 10 |
Absolute Max. Power Diss. (W) | 830m |
C(iss) Max. (F) | 40p |
I(D) Abs. Drain Current (A) | 500m |
I(DSS) Max. (A) | 500n |
I(GSS) Max. (A) | 10n |
Military | N |
Package | TO-92 |
Thermal Resistance Junc-Amb. | 150 |
V(BR)DSS (V) | 60 |
V(BR)GSS (V) | 15 |
V(GS)th Max. (V) | 3.0 |
V(GS)th Min. (V) | .8 |
g(fs) Max, (S) Trans. conduct, | 200m |
r(DS)on Max. (Ohms) | 5.0 |