Product Datasheet Search Results:

STP55N06L.pdf7 Pages, 206 KB, Original
STP55N06L
Stmicroelectronics
N-Channel Enhancement Mode Power MOS Transistors
STP55N06LFI.pdf7 Pages, 210 KB, Original
STP55N06LFI
Stmicroelectronics
N-Channel Enhancement Mode Low Threshold Power MOS Transistors
STP55N06L.pdf67 Pages, 163 KB, Original
STP55N06L
Toshiba
Power MOSFETs Cross Reference Guide
STP55N06LFI.pdf67 Pages, 163 KB, Original
STP55N06LFI
Toshiba
Power MOSFETs Cross Reference Guide

Product Details Search Results:

St.com/STP55N06
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"520 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"55 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0230 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"220 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1466 Bytes - 11:57:46, 05 October 2024
St.com/STP55N06FI
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"520 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"30 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0230 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"220 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V...
1475 Bytes - 11:57:46, 05 October 2024