Product Datasheet Search Results:

STP55N06LFI.pdf7 Pages, 210 KB, Original
STP55N06LFI
Stmicroelectronics
N-Channel Enhancement Mode Low Threshold Power MOS Transistors
STP55N06LFI.pdf67 Pages, 163 KB, Original
STP55N06LFI
Toshiba
Power MOSFETs Cross Reference Guide

Product Details Search Results:

St.com/STP55N06
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"520 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"55 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0230 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"220 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1466 Bytes - 11:39:00, 05 October 2024
St.com/STP55N06FI
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"520 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"30 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0230 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"220 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V...
1475 Bytes - 11:39:00, 05 October 2024