Product Datasheet Search Results:

BSM50GD120DN2.pdf9 Pages, 208 KB, Original
BSM50GD120DN2E3226.pdf10 Pages, 350 KB, Original
BSM50GD120DN2G.pdf10 Pages, 250 KB, Original
BSM50GD120DN2.pdf10 Pages, 266 KB, Original
BSM50GD120DN2
Infineon Technologies
IGBT Modules 1200V 50A FL BRIDGE
BSM50GD120DN2BOSA1.pdf10 Pages, 266 KB, Original
BSM50GD120DN2G.pdf10 Pages, 277 KB, Original
BSM50GD120DN2G
Infineon Technologies
TRANS IGBT MODULE N-CH 1200V 78A 21ECONOPACK 3
BSM50GD120DN2.pdf9 Pages, 127 KB, Original
BSM50GD120DN2
Siemens Semiconductors
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
BSM50GD120DN2E3226.pdf9 Pages, 134 KB, Original
BSM50GD120DN2E3226
Siemens Semiconductors
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate)
BSM50GD120DN2G.pdf9 Pages, 184 KB, Original
BSM50GD120DN2G
Siemens Semiconductors
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)

Product Details Search Results:

Infineon.com/BSM50GD120DN2
{"Gate-Emitter Leakage Current":"200 nA","Continuous Collector Current at 25 C":"72 A","Product Category":"IGBT Modules","Factory Pack Quantity":"500","Brand":"Infineon Technologies","Pd - Power Dissipation":"350 W","Collector-Emitter Saturation Voltage":"2.5 V","Collector- Emitter Voltage VCEO Max":"1200 V","Product":"IGBT Silicon Modules","Mounting Style":"Screw","Maximum Gate Emitter Voltage":"20 V","Minimum Operating Temperature":"- 40 C","Package \/ Case":"EconoPACK 2A","Configuration":"Hex","Maximum O...
1535 Bytes - 09:01:17, 06 October 2024
Infineon.com/BSM50GD120DN2BOSA1
{"Rad Hardened":"No"}...
1051 Bytes - 09:01:17, 06 October 2024
Infineon.com/BSM50GD120DN2E3226
{"Gate-Emitter Leakage Current":"200 nA","Collector-Emitter Saturation Voltage":"2.5 V","Product Category":"IGBT Modules","Factory Pack Quantity":"10","Brand":"Infineon Technologies","Pd - Power Dissipation":"350 W","Continuous Collector Current at 25 C":"50 A","Collector- Emitter Voltage VCEO Max":"1200 V","Product":"IGBT Silicon Modules","Mounting Style":"Screw","Maximum Gate Emitter Voltage":"20 V","Package \/ Case":"EconoPACK 2","Configuration":"Hex","Maximum Operating Temperature":"+ 150 C","Manufactur...
1798 Bytes - 09:01:17, 06 October 2024
Infineon.com/BSM50GD120DN2E3226BOSA1
805 Bytes - 09:01:17, 06 October 2024
Infineon.com/BSM50GD120DN2G
{"Gate-Emitter Leakage Current":"200 nA","Continuous Collector Current at 25 C":"78 A","Product Category":"IGBT Modules","Factory Pack Quantity":"500","Brand":"Infineon Technologies","Pd - Power Dissipation":"400 W","Collector-Emitter Saturation Voltage":"2.5 V","Collector- Emitter Voltage VCEO Max":"1200 V","Product":"IGBT Silicon Modules","Mounting Style":"Screw","Maximum Gate Emitter Voltage":"20 V","Minimum Operating Temperature":"- 40 C","Package \/ Case":"EconoPACK 3A","Configuration":"Hex","Maximum O...
1567 Bytes - 09:01:17, 06 October 2024

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