Product Datasheet Search Results:
10 Pages, 350 KB, Original- BSM50GD120DN2E3226
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Product Details Search Results:
Infineon.com/BSM50GD120DN2E3226
{"Gate-Emitter Leakage Current":"200 nA","Collector-Emitter Saturation Voltage":"2.5 V","Product Category":"IGBT Modules","Factory Pack Quantity":"10","Brand":"Infineon Technologies","Pd - Power Dissipation":"350 W","Continuous Collector Current at 25 C":"50 A","Collector- Emitter Voltage VCEO Max":"1200 V","Product":"IGBT Silicon Modules","Mounting Style":"Screw","Maximum Gate Emitter Voltage":"20 V","Package \/ Case":"EconoPACK 2","Configuration":"Hex","Maximum Operating Temperature":"+ 150 C","Manufactur...
1798 Bytes - 08:43:34, 06 October 2024
Infineon.com/BSM50GD120DN2E3226BOSA1
805 Bytes - 08:43:34, 06 October 2024
