Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"P-Channel Standard FETs","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 1mA","Series":"-","Package / Case":"TO-226-3, TO-92-3 (TO-226AA)","Supplier Device Package":"TO-92-3","Datasheets":"VP0808","Rds On (Max) @ Id, Vgs":"5 Ohm @ 1A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Bulk","Power - Max":"1W","Standard Package":"1,000","PCN Ass...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"- 80 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"30 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"- 280 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"1 W","Packaging":"Reel","Rise Time":"40 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"5 Ohms","Package / Case":"TO-92-3","Typical...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"- 80 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"30 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"- 280 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"1 W","Packaging":"Reel","Rise Time":"40 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"5 Ohms","Package / Case":"TO-92-3","Typical...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"- 80 V","Transistor Polarity":"P-Channel","Channel Mode":"Enhancement","Brand":"Microchip Technology","Id - Continuous Drain Current":"- 280 mA","Mounting Style":"Through Hole","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"5 Ohms","Package / Case":"TO-92-3","RoHS":"Details","Manufacturer":"Microchip"}...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"- 80 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"30 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"- 280 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"1 W","Packaging":"Reel","Rise Time":"40 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"5 Ohms","Package / Case":"TO-92-3","Typical...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"- 80 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Vgs - Gate-Source Breakdown Voltage":"30 V","Brand":"Microchip Technology","Id - Continuous Drain Current":"- 280 mA","Mounting Style":"Through Hole","Pd - Power Dissipation":"1 W","Packaging":"Reel","Rise Time":"40 ns","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"5 Ohms","Package / Case":"TO-92-3","Typical...

{"Terminal Finish":"MATTE TIN","Terminal Form":"THROUGH-HOLE","Qualification Status":"COMMERCIAL","JESD-609 Code":"e3","Package Shape":"ROUND","Status":"Active","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2800 A","Feedback Cap-Max (Crss)":"25 pF","EU RoHS Compliant":"Yes","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","Moisture Sensitivity Level":"NOT APPLICA...