Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 2mA","Package / Case":"TO-243AA","Current - Continuous Drain (Id) @ 25\u00b0C":"200mA (Tj)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"C04-029 MB","PCN Assembly/Origin":"Fab Site Addition 14/Aug/2014 Fab Site Addition 06/Apr/2015 Die Material/Assembly Site 29/Jul/2015","Rds On (Max) @ Id, Vgs":"20 Ohm @ 100mA, 10V","Datasheets":"VN2460","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1","Drai...

{"Terminal Finish":"TIN LEAD","Terminal Form":"FLAT","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","JESD-609 Code":"e0","Package Shape":"RECTANGULAR","Additional Feature":"LOW THRESHOLD","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2000 A","Sub Category":"FET General Purpose Power","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resi...

{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Rad Hardened":"No","Mounting":"Surface Mount","Noise Figure":"Not Required dB","Drain-Source On-Volt":"600 V","Frequency (Max)":"Not Required MHz","Drain-Source On-Res":"20 ohm","Power Dissipation":"1.6 W","Operating Temp Range":"-55C to 150C","Package Type":"SOT-89","Output Power (Max)":"Not Required W","Pin Count":"3 +Tab","Continuous Drain Current":"0.2 A","Power Gain "...