Product Datasheet Search Results:
- VN0640N3
- Supertex, Inc.
- N-Channel Enhancement-Mode Vertical DMOS FET
Product Details Search Results:
Supertex.com/VN0640N3
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","JESD-609 Code":"e0","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Drain Current-Max (Abs) (ID)":"0.2500 A","Sub Category":"FET General Purpose Power","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source ...
1774 Bytes - 02:10:04, 18 November 2024
Supertex.com/VN0640N3P001
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"400 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1519 Bytes - 02:10:04, 18 November 2024
Supertex.com/VN0640N3P002
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"400 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1521 Bytes - 02:10:04, 18 November 2024
Supertex.com/VN0640N3P003
{"Terminal Form":"THROUGH-HOLE","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"400 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mount":"NO","Operating Mode":"ENHANCEMEN...
1443 Bytes - 02:10:04, 18 November 2024
Supertex.com/VN0640N3P004
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"400 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1520 Bytes - 02:10:04, 18 November 2024
Supertex.com/VN0640N3P005
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"400 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1521 Bytes - 02:10:04, 18 November 2024
Supertex.com/VN0640N3P006
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"400 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1521 Bytes - 02:10:04, 18 November 2024
Supertex.com/VN0640N3P007
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"400 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1518 Bytes - 02:10:04, 18 November 2024
Supertex.com/VN0640N3P008
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"400 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1517 Bytes - 02:10:04, 18 November 2024
Supertex.com/VN0640N3P011
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"400 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1519 Bytes - 02:10:04, 18 November 2024
Supertex.com/VN0640N3P012
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"400 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1517 Bytes - 02:10:04, 18 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
TD240N36KOF.pdf | 0.39 | 1 | Request | |
TT240N38K.pdf | 0.39 | 1 | Request | |
TD240N38K.pdf | 0.39 | 1 | Request | |
TD240N36K.pdf | 0.39 | 1 | Request | |
TT240N32K.pdf | 0.39 | 1 | Request | |
TD240N32K.pdf | 0.39 | 1 | Request | |
TZ240N36K.pdf | 0.41 | 1 | Request | |
TZ240N30K.pdf | 0.41 | 1 | Request | |
TT240N30K.pdf | 0.39 | 1 | Request | |
TZ240N36KOF.pdf | 0.41 | 1 | Request | |
TZ240N34K.pdf | 0.41 | 1 | Request | |
TD240N30K.pdf | 0.39 | 1 | Request |