Product Datasheet Search Results:
4 Pages, 30 KB, Original- VN0535N3
- Supertex, Inc.
- N-Channel Enhancement-Mode Vertical DMOS FETs
Product Details Search Results:
Supertex.com/VN0535N3
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","JESD-609 Code":"e0","Package Shape":"ROUND","Additional Feature":"HIGH INPUT IMPEDANCE","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1000 A","Drain Current-Max (Abs) (ID)":"0.1000 A","Sub Category":"FET General Purpose Power","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Configuration"...
1858 Bytes - 00:33:13, 23 November 2024
Supertex.com/VN0535N3P001
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"35 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"350 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1516 Bytes - 00:33:13, 23 November 2024
Supertex.com/VN0535N3P002
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"35 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"350 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1516 Bytes - 00:33:13, 23 November 2024
Supertex.com/VN0535N3P003
{"Terminal Form":"THROUGH-HOLE","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Additional Feature":"HIGH INPUT IMPEDANCE","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"35 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"350 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surf...
1485 Bytes - 00:33:13, 23 November 2024
Supertex.com/VN0535N3P004
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"35 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"350 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1517 Bytes - 00:33:13, 23 November 2024
Supertex.com/VN0535N3P005
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"35 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"350 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1518 Bytes - 00:33:13, 23 November 2024
Supertex.com/VN0535N3P006
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"35 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"350 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1520 Bytes - 00:33:13, 23 November 2024
Supertex.com/VN0535N3P007
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"35 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"350 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1520 Bytes - 00:33:13, 23 November 2024
Supertex.com/VN0535N3P008
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"35 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"350 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1520 Bytes - 00:33:13, 23 November 2024
Supertex.com/VN0535N3P011
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"35 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"350 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1520 Bytes - 00:33:13, 23 November 2024
Supertex.com/VN0535N3P012
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"35 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"350 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1520 Bytes - 00:33:13, 23 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| DD435N32K.pdf | 0.26 | 1 | Request | |
| DD435N36K.pdf | 0.26 | 1 | Request | |
| IXFH35N30.pdf | 0.16 | 1 | Request | |
| IXFM35N30.pdf | 0.16 | 1 | Request | |
| 7B35N318G460G1.pdf | 0.08 | 1 | Request | |
| 7B35N359T881G1.pdf | 0.07 | 1 | Request | |
| 7B35N369T744.pdf | 0.06 | 1 | Request | |
| 7B35N316Q060G1.pdf | 0.08 | 1 | Request | |
| 7B35N359T184G1.pdf | 0.08 | 1 | Request | |
| 7B35N344Q060G1.pdf | 0.04 | 1 | Request | |
| 7B35N359S783G1.pdf | 0.08 | 1 | Request | |
| 7B36T335N303G1.pdf | 0.04 | 1 | Request |
